डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
RJK6026DPP | Silicon N Channel MOSFET High Speed Power Switching RJK6026DPP
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1592-0200 Rev.2.00 Jun 04, 2008
Features
• Low on-resistance • Low leakage current • High speed switching
Outline
RENESAS Package co |
Renesas Technology |
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RJK6026DPP-E0 | MOS FET Preliminary Datasheet
RJK6026DPP-E0
600V - 5A - MOS FET High Speed Power Switching
Features
Low on-resistance RDS(on) = 2.0 typ. (at ID = 2.5 A, VGS = 10 V, Ta = 25C) Low leakage current Hig |
Renesas |
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