डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
RJK6025DPE | Silicon N Channel MOS FET High Speed Power Switching www.DataSheet4U.com
RJK6025DPE
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 13 Ω typ. (at ID =0.4 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High s |
Renesas Technology |
|
RJK6025DPH-E0 | MOS FET | Renesas |
|
RJK6025DPD | N-Channel Power MOSFET | Renesas |
|
RJK6025DPE | Silicon N Channel MOS FET High Speed Power Switching | Renesas Technology |
www.DataSheet.in | 2017 | संपर्क |