डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
RJK6025DPD | N-Channel Power MOSFET Preliminary Datasheet
RJK6025DPD
600V - 1A - MOS FET High Speed Power Switching
Features
Low on-resistance RDS(on) = 13.5 typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25C) Low drive current High de |
Renesas |
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RJK6025DPH-E0 | MOS FET | Renesas |
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RJK6025DPD | N-Channel Power MOSFET | Renesas |
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RJK6025DPE | Silicon N Channel MOS FET High Speed Power Switching | Renesas Technology |
www.DataSheet.in | 2017 | संपर्क |