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RJH60M1DPE DataSheet

No. Partie # Fabricant Description Fiche Technique
1
RJH60M1DPE

Renesas
IGBT

 Short circuit withstand time (8 s typ.)
 Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25°C)
 Built in fast recovery diode (100 ns typ.) in one package
 Trench gate and thin wafer technology
Datasheet



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