डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
RJH60F6DPK | Silicon N-Channel IGBT Preliminary Datasheet
RJH60F6DPK
Silicon N Channel IGBT High Speed Power Switching
Features
Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15V, Ta = 25°C) Buil |
Renesas Technology |
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RJH60F6DPK | Silicon N-Channel IGBT | Renesas Technology |
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RJH60F6DPQ-A0 | High Speed Power Switching | Renesas |
www.DataSheet.in | 2017 | संपर्क |