RJ1G12BGN डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor RJ1G12BGN FEATURES ·Drain Current –ID= 120A@ TC=25℃ ·Drain Source Voltage- : VDSS=40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.86mΩ(Max) ·100% avalanche t

RJ1G12BGN 　　Nch 40V 120A Power MOSFET 　　 Datasheet lOutline VDSS 40V TO-263AB 　 RDS(on)(Max.) 1.86mΩ ID ±120A LPT(L) PD 178W 　 　 　　　　　　 lFeatures 1) Low on - resista