RFL1N10 डाटा शीट PDF( Datasheet )

Semiconductor RFL1N08, RFL1N10 1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs Description These are N-channel enhancement mode silicon-gate power field-effect transistors designed for applications such

RFL1N10L September 1998 1A, 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFET Description This is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use wit