RD3U080CN डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor RD3U080CN FEATURES ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 300mΩ(Max) ·100% avalanche te

RD3U080CN 　　Nch 250V 8A Power MOSFET 　　 Datasheet lOutline VDSS 250V 　 RDS(on)(Max.) 300mΩ DPAK ID ±8A TO-252 PD 85W lFeatures 1) Low on-resistance 2) Fast switching 3) Drive circuits