RD3T100CN डाटा शीट PDF( Datasheet )

RD3T100CN 　　Nch 200V 10A Power MOSFET 　　 Datasheet lOutline VDSS 200V 　 RDS(on)(Max.) 182mΩ DPAK ID ±10A TO-252 PD 85W lFeatures 1) Low on-resistance 2) Fast switching speed 3) Drive c

isc N-Channel MOSFET Transistor RD3T100CN FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 182mΩ(Max) ·100% avalanche t