डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
RD3T050CN | N-Channel MOSFET isc N-Channel MOSFET Transistor
RD3T050CN
FEATURES ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 200V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 760mΩ(Max) ·100% avalanche te |
INCHANGE |
|
RD3T050CN | Power MOSFET RD3T050CN
Nch 200V 5A Power MOSFET
Datasheet
lOutline
VDSS
200V
RDS(on)(Max.)
760mΩ
DPAK
ID
±5A
TO-252
PD
29W
lFeatures 1) Low on-resistance 2) Fast switching speed 3) Drive cir |
ROHM |
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