डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
RD3S100CN | Power MOSFET RD3S100CN
Nch 190V 10A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
190V 182mΩ ±10A
85W
lFeatures
1) Low on-resistance 2) Fast switching speed 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-f |
ROHM |
|
RD3S100CN | N-Channel MOSFET isc N-Channel MOSFET Transistor
RD3S100CN
FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 190V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 182mΩ(Max) ·100% avalanche t |
INCHANGE |
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