RD3S075CN डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor RD3S075CN FEATURES ·Drain Current –ID= 7.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 190V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 336mΩ(Max) ·100% avalanche

RD3S075CN 　　Nch 190V 7.5A Power MOSFET VDSS RDS(on)(Max.) ID PD 190V 336mΩ ±7.5A 52W lFeatures 1) Low on-resistance 2) Fast switching speed 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb