RD3P175SN डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor RD3P175SN FEATURES ·Drain Current –ID= 17.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 105mΩ(Max) ·100% avalanche

RD3P175SN 　　Nch 100V 17.5A Power MOSFET 　　 Datasheet lOutline VDSS 100V 　 RDS(on)(Max.) 105mΩ DPAK ID ±17.5A TO-252 PD 20W 　 　　　　　　 lFeatures 1) Low on - resistance 2)