RD3L140SP डाटा शीट PDF( Datasheet )

isc P-Channel MOSFET Transistor RD3L140SP ·FEATURES ·Static drain-source on-resistance: RDS(on)≤84mΩ(VGS= -10V; ID= -14A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lo

RD3L140SP 　　Pch -60V -14A Power MOSFET 　　 Datasheet VDSS RDS(on)(Max.) ID PD -60V 84mΩ ±14A 20W lFeatures 1) Low on - resistance 2) Fast switching speed 3) Drive circuits can be simple 4) Parallel