RD3L050SN डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor RD3L050SN FEATURES ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 109mΩ(Max) ·100% avalanche tes

RD3L050SN 　　Nch 60V 5A Power MOSFET 　　 Datasheet lOutline VDSS 60V 　 RDS(on)(Max.) 109mΩ DPAK ID ±5.0A TO-252 PD 15W 　 　　　　　　 lFeatures 1) Low on - resistance 2) Fast s