RD3H200SN डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor RD3H200SN FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 45V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 28mΩ(Max) ·100% avalanche tes

RD3H200SN 　　Nch 45V 20A Power MOSFET 　　 Datasheet lOutline VDSS 45V 　 RDS(on)(Max.) 28mΩ DPAK ID ±20A TO-252 PD 20W 　 　　　　　　 lFeatures 1) Low on - resistance 2) Fast sw