डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
RD3H080SP | P-Channel MOSFET isc P-Channel MOSFET Transistor
RD3H080SP
FEATURES ·Drain Current –ID= -8A@ TC=25℃ ·Drain Source Voltage-
: VDSS= -45V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 91mΩ(Max) ·100% avalanche te |
INCHANGE |
|
RD3H080SP | Power MOSFET RD3H080SP
Pch -45V -8A Power MOSFET
Datasheet
lOutline
VDSS
-45V
RDS(on)(Max.)
91mΩ
DPAK
ID
±8A
TO-252
PD
15W
lFeatures
1) Low on - resistance 2) Fast s |
ROHM |
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