RD3H045SP डाटा शीट PDF( Datasheet )

isc P-Channel MOSFET Transistor RD3H045SP FEATURES ·Drain Current –ID= -4.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= -45V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 155mΩ(Max) ·100% avalanche

RD3H045SP 　　Pch -45V -4.5A Power MOSFET 　　 Datasheet lOutline VDSS -45V 　 RDS(on)(Max.) 155mΩ DPAK ID ±4.5A TO-252 PD 15W 　 　　　　　　 lFeatures 1) Low on - resistance 2) F