RCX081N20 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor RCX081N20 FEATURES ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS=200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.77Ω(Max) ·100% avalanche tes

RCX081N20 Nch 200V 8.0A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD 200V 770mW 8.0A 40W lFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is e