RCJ510N25 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor RCJ510N25 FEATURES ·Drain Current –ID= 51A@ TC=25℃ ·Drain Source Voltage- : VDSS=250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 65mΩ(Max) ·100% avalanche tes

RCJ510N25 Nch 250V 51A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD 250V 65m 51A 304W Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is