R6530ENZ1 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor R6530ENZ1 FEATURES ·Drain Current –ID= 30A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 140mΩ(Max) ·100% avalanche te

R6530ENZ1 　　Nch 650V 30A Power MOSFET 　　 Datasheet lOutline VDSS 650V TO-247 　 RDS(on)(Max.) ID PD 0.140Ω ±30A 305W e lFeatures 1) Low on-resistance t 2) Fast switching speed 3) Parallel us