R6520KNX डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor R6520KNX FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 205mΩ(Max) ·100% avalanche tes

R6520KNX 　　Nch 650V 20A Power MOSFET 　　 Datasheet lOutline VDSS 650V 　 RDS(on)(Max.) 0.205Ω ID ±20A TO-220FM PD 68W 　 　　　　　　 lFeatures 1) Low on-resistance 2) Ultra fast

isc N-Channel MOSFET Transistor R6520KNX1 FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 205mΩ(Max) ·100% avalanche te

R6520KNX3 Nch 650V 20A Power MOSFET VDSS RDS(on)(Max.) ID PD 650V 0.205Ω ±20A 220W lFeatures 1) Low on-resistance 2) Ultra Fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lOutli