डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
R6520ENZ | N-Channel MOSFET isc N-Channel MOSFET Transistor
R6520ENZ
FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage-
: VDSS=650V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 205mΩ(Max) ·100% avalanche tes |
INCHANGE |
|
R6520ENZ | Power MOSFET R6520ENZ
Nch 650V 20A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
650V 0.205Ω ±20A
68W
lFeatures
1) Low on-resistance 2) Fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant
lO |
ROHM |
|
R6520ENZ1 | N-Channel MOSFET isc N-Channel MOSFET Transistor
R6520ENZ1
FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage-
: VDSS=650V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 205mΩ(Max) ·100% avalanche te |
INCHANGE |
|
R6520ENZ4 | Power MOSFET R6520ENZ4
Nch 650V 20A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
650V 0.205Ω ±20A 231W
lFeatures
1) Low on-resistance 2) Fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant
lOutli |
ROHM |
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