R6515KNJ डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor R6515KNJ FEATURES ·Drain Current –ID= 15A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 315mΩ(Max) ·100% avalanche tes

R6515KNJ 　　Nch 650V 15A Power MOSFET VDSS RDS(on)(Max.) ID PD 650V 0.315Ω ±15A 184W lFeatures 1) Low on-resistance 2) Ultra fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compli