R6515ENZ डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor R6515ENZ FEATURES ·Drain Current –ID= 15A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 315mΩ(Max) ·100% avalanche tes

R6515ENZ 　　Nch 650V 15A Power MOSFET 　　 Datasheet lOutline VDSS 650V TO-3PF 　 RDS(on)(Max.) ID PD 0.315Ω ±15A 60W e lFeatures 1) Low on-resistance t 2) Fast switching speed 3) Parallel use