R6511ENJ डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor R6511ENJ FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 400mΩ(Max) ·100% avalanche tes

R6511ENJ 　　Nch 650V 11A Power MOSFET VDSS RDS(on)(Max.) ID PD 650V 0.4Ω ±11A 124W lFeatures 1) Low on-resistance 2) Fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lOu