R6509ENX डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor R6509ENX FEATURES ·Drain Current –ID= 9A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 585mΩ(Max) ·100% avalanche test

R6509ENX 　　Nch 650V 9A Power MOSFET 　　 Datasheet lOutline VDSS 650V 　 RDS(on)(Max.) 0.585Ω ID ±9A TO-220FM PD 48W 　 　　　　　　 lFeatures 1) Low on-resistance 2) Fast switchi