R6504KNX डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor R6504KNX FEATURES ·Drain Current –ID= 4.0A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.05Ω(Max) ·100% avalanche te

R6504KNX 　　Nch 650V 4A Power MOSFET 　　 Datasheet lOutline VDSS 650V 　 RDS(on)(Max.) 1.050Ω ID ±4.0A TO-220FM PD 40W 　 　　　　　　 lFeatures 1) Low on-resistance 2) Ultra fast