R6504 डाटा शीट PDF( Datasheet )

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isc N-Channel MOSFET Transistor R6504ENJ FEATURES ·Drain Current –ID= 4.0A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.05Ω(Max) ·100% avalanche te

R6504ENJ 　　Nch 650V 4A Power MOSFET VDSS RDS(on)(Max.) ID PD 650V 1.050Ω ±4.0A 58W lFeatures 1) Low on-resistance 2) Fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lO

isc N-Channel MOSFET Transistor R6504ENX FEATURES ·Drain Current –ID= 4.0A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.05Ω(Max) ·100% avalanche te

R6504ENX 　　Nch 650V 4A Power MOSFET 　　 Datasheet lOutline VDSS 650V 　 RDS(on)(Max.) 1.050Ω ID ±4.0A TO-220FM PD 40W 　 　　　　　　 lFeatures 1) Low on-resistance 2) Fast switc

R6504KND3 Nch 650V 4A Power MOSFET VDSS RDS(on)(Max.) ID PD 650V 1.050Ω ±4.0A 58W lFeatures 1) Low on-resistance 2) Ultra fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant l

isc N-Channel MOSFET Transistor R6504KNJ FEATURES ·Drain Current –ID= 4.0A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.05Ω(Max) ·100% avalanche te