R6030ENZ डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor R6030ENZ FEATURES ·Drain Current –ID= 30A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 130mΩ(Max) ·100% avalanche tes

R6030ENZ 　　Nch 600V 30A Power MOSFET 　　 Datasheet lOutline VDSS 600V 　 RDS(on)(Max.) 0.130Ω ID ±30A TO-3PF PD 120W 　 　　　　　　 lInner circuit lFeatures 1) Low on-resistan

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and re

R6030ENZ1 Nch 600V 30A Power MOSFET Data Sheet lOutline VDSS RDS(on) (Max.) 600V 0.130W TO-247 ID 30A PD 120W (1) (2) (3) lFeatures 1) Low on-resistance. lInner circuit 2) Fast switching speed. 3)