R6030ENX डाटा शीट PDF( Datasheet )

R6030ENX 　　Nch 600V 30A Power MOSFET 　　 Datasheet VDSS RDS(on)(Max.) ID PD 600V 0.130Ω ±30A 86W lFeatures 1) Low on-resistance 2) Fast switching 3) Drive circuits can be simple 4) Parallel use is

isc N-Channel MOSFET Transistor R6030ENX FEATURES ·Drain Current –ID= 30A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 130mΩ(Max) ·100% avalanche tes