R6020KNZ डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor R6020KNZ FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 196mΩ(Max) ·100% avalanche tes

R6020KNZ 　　Nch 600V 20A Power MOSFET 　　 Datasheet lOutline VDSS 600V 　 RDS(on)(Max.) 0.196Ω ID ±20A TO-3PF PD 68W 　 　　　　　　 lFeatures 1) Low on-resistance. 2) Ultra fast

isc N-Channel MOSFET Transistor R6020KNZ1 FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 196mΩ(Max) ·100% avalanche te

R6020KNZ1 　　Nch 600V 20A Power MOSFET 　　 Datasheet lOutline VDSS 600V 　 RDS(on)(Max.) ID PD 0.196Ω ±20A 231W e lFeatures 1) Low on-resistance. 2) Ultra fast switching speed. t 3) Parallel us

R6020KNZ4 　　Nch 600V 20A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 0.196Ω ±20A 231W lFeatures 1) Low on-resistance 2) Fast switching speed 3) Parallel use is easy 4) Pb-free lead plating ; RoHS compli