R6020KNJ डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor R6020KNJ FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 196mΩ(Max) ·100% avalanche tes

R6020KNJ 　　Nch 600V 20A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 0.196Ω ±20A 231W lFeatures 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoH