R6020ENZ1 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor R6020ENZ1 FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 196mΩ(Max) ·100% avalanche te

R6020ENZ1 Nch 600V 20A Power MOSFET Data Sheet lOutline VDSS RDS(on) (Max.) 600V 0.196W TO-247 ID 20A PD 120W (1) (2) (3) lFeatures 1) Low on-resistance. lInner circuit 2) Fast switching speed. 3)