R6020ENX डाटा शीट PDF( Datasheet )

R6020ENX 　　Nch 600V 20A Power MOSFET 　　 Datasheet VDSS RDS(on)(Max.) ID PD 600V 0.196Ω ±20A 68W lFeatures 1) Low on-resistance 2) Fast switching 3) Drive circuits can be simple 4) Parallel use is

isc N-Channel MOSFET Transistor INCHANGE Semiconductor R6020ENX ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 0.196Ω@10V ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variation