डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
R6009JNJ | N-Channel MOSFET isc N-Channel MOSFET Transistor
R6009JNJ
FEATURES ·Drain Current –ID=9A@ TC=25℃ ·Drain Source Voltage-
: VDSS=600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 585mΩ(Max) ·100% avalanche teste |
INCHANGE |
|
R6009JNJ | Power MOSFET R6009JNJ
Nch 600V 9A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
600V 0.585Ω
±9A 125W
lFeatures
1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be sim |
ROHM |
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