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R1RP0404DGE-2PR DataSheet

No. Partie # Fabricant Description Fiche Technique
1
R1RP0404DGE-2PR

Renesas
4M High Speed SRAM

• Single 5.0 V supply: 5.0 V ± 10%
• Access time 12 ns (max)
• Completely static memory  No clock or timing strobe required
• Equal access and cycle times
• Directly TTL compatible  All inputs and outputs
• Operating current: 130 mA (max)
• TTL sta
Datasheet



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