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Siemens Semiconductor Group |
NPN Silicon Double Transistors (To be used as a current mirror Good thermal coupling and VBE matching) tor Group 1 5.91 BCV 61 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics for transistor T1 Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = |
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