डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
PYA28C16B | EEPROM FEATURES
Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply
Byte Write Cycle Time - 10 ms Maximum
Low Power CMOS: - 60 mA Active Current - 150 µA Standby Current
Fast Write Cycle T |
PYRAMID |
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PYA28C16B | EEPROM | PYRAMID |
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PYA28C16 | EEPROM | PYRAMID |
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