PHD55N03 डाटा शीट PDF( Datasheet )

Isc N-Channel MOSFET Transistor PHD55N03 ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for

Philips Semiconductors Product specification N-channel TrenchMOS™ transistor Logic level FET FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistan

PHP/PHB/PHD55N03LTA TrenchMOS™ Logic Level FET Rev. 04 — 4 September 2002 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology