डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
PHB2N50 | PowerMOS transistor Philips Semiconductors
Product specification
PowerMOS transistor
PHB2N50
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting feat |
NXP |
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PHB2N50E | PowerMOS transistors Avalanche energy rated Philips Semiconductors
Product specification
PowerMOS transistors Avalanche energy rated
FEATURES
• Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cyclin |
NXP |
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