डेटा पत्रक ( Datasheet PDF ) |
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PE60 | Power Panel 6W Potentiometer www.vishay.com
PE60
Vishay Sfernice
Power Panel 6 W Potentiometer
LINKS TO ADDITIONAL RESOURCES
3D 3D
3D Models
QUICK REFERENCE DATA
Multiple module Switch module Detent module Special electrical laws Sealin |
Vishay |
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PE6003 | N-Channel Enhancement Mode Power MOSFET PE6003
N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The PE6003 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device |
semi one |
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PE6004 | N-Channel Enhancement Mode Power MOSFET N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The PE6004 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suita |
semi one |
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PE6005 | N-Channel Enhancement Mode Power MOSFET N-Channel Enhancement Mode Power MOSFET
Description
The PE6005 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
G |
semi one |
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PE600BA | MOSFET PE600BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 9.8mΩ @VGS = 10V
ID 32A
PDFN 3X3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS |
UNIKC |
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PE600SA | MOSFET PE600SA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 12mΩ @VGS = 10V
ID 25A
PDFN 3X3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
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UNIKC |
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PE6018 | N-Channel Enhancement Mode Power MOSFET N-Channel Enhancement Mode Power MOSFET
PE6018
Description
The PE6018 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applicat |
semi one |
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