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PBSS303NZ DataSheet

No. Partie # Fabricant Description Fiche Technique
1
PBSS303NZ

nexperia
5.5A NPN transistor
„ Low collector-emitter saturation voltage VCEsat „ High collector current capability IC and ICM „ High collector current gain (hFE) at high IC „ High efficiency due to less heat generation „ Smaller required Printed-Circuit Board (PCB) area than for
Datasheet



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