PBRN123E fiche technique

No.	Partie #	Fabricant	Description
1	PBRN123ES	nexperia	NPN RET I 800 mA output current capability I High current gain hFE I Built-in bias resistors I Simpliﬁes circuit design I Low collector-emitter saturation voltage VCEsat I Reduces component count I Reduces pick and place costs I ±10 % resistor ratio toleran
2	PBRN123ET	nexperia	NPN RET I 800 mA output current capability I High current gain hFE I Built-in bias resistors I Simpliﬁes circuit design I Low collector-emitter saturation voltage VCEsat I Reduces component count I Reduces pick and place costs I ±10 % resistor ratio toleran
3	PBRN123EK	nexperia	NPN RET I 800 mA output current capability I High current gain hFE I Built-in bias resistors I Simpliﬁes circuit design I Low collector-emitter saturation voltage VCEsat I Reduces component count I Reduces pick and place costs I ±10 % resistor ratio toleran
4	PBRN123E	nexperia	NPN RET I 800 mA output current capability I High current gain hFE I Built-in bias resistors I Simpliﬁes circuit design I Low collector-emitter saturation voltage VCEsat I Reduces component count I Reduces pick and place costs I ±10 % resistor ratio toleran
5	PBRN123E	NXP Semiconductors	NPN 800 mA 40 V BISS RETs I 800 mA output current capability I High current gain hFE I Built-in bias resistors I Simpliﬁes circuit design I Low collector-emitter saturation voltage VCEsat I Reduces component count I Reduces pick and place costs I ±10 % resistor ratio toleranc