| No. | Partie # | Fabricant | Description | Fiche Technique |
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INCHANGE |
NPN Transistor .5 ℃/W TIP132 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitte |
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STMicroelectronics |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS For PNP types voltage and current values are negative. October 1999 1/4 TIP132 / TIP135 / TIP137 THERMAL DATA R thj -case R thj -amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 1.78 63.5 o o C/W C/W ELECTRICAL C |
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Power Innovations Limited |
NPN SILICON POWER DARLINGTONS 10 seconds NOTES: 1. 2. 3. 4. TIP131 TIP132 V EBO IC ICM IB Ptot Ptot ½LIC 2 Tj Tstg TL VCEO VCBO SYMBOL VALUE 60 80 100 60 80 100 5 8 12 0.3 70 2 75 -65 to +150 -65 to +150 260 V A A A W W mJ °C °C °C V V UNIT This value applies for tp ≤ 0.3 ms, du |
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MCC |
30000 Watts Transient Voltage Suppressor • Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) x 30000 Watts Peak Pulse Power Capability on 10/1000us waveform x Glass passivated junction x Plastic package Devices and Low incremental su |
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MCC |
30000 Watts Transient Voltage Suppressor • Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) x 30000 Watts Peak Pulse Power Capability on 10/1000us waveform x Glass passivated junction x Plastic package Devices and Low incremental su |
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WON-TOP |
30000W TRANSIENT VOLTAGE SUPPRESSOR Glass Passivated Die Construction 30000W Peak Pulse Power Dissipation 28V – 288V Standoff Voltage Uni- and Bi-Directional Versions Available Excellent Clamping Voltage Typical Response Time < 1nS Plastic Case Material has UL Flammabilit |
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WON-TOP |
30000W TRANSIENT VOLTAGE SUPPRESSOR Glass Passivated Die Construction 30000W Peak Pulse Power Dissipation 28V – 288V Standoff Voltage Uni- and Bi-Directional Versions Available Excellent Clamping Voltage Typical Response Time < 1nS Plastic Case Material has UL Flammabilit |
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JGD |
30000 Watts Transient Voltage Suppressors 30KP28(C)(A) THRU 30KP288(C)(A) 30000 Watts Transient Voltage Suppressors * 30000 Watts Peak Pulse Power Capability on 10/1000us waveform * Glass passivated junction and plastic package devices * Low incremental surge resistance * High temperature |
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JGD |
30000 Watts Transient Voltage Suppressors 30KP28(C)(A) THRU 30KP288(C)(A) 30000 Watts Transient Voltage Suppressors * 30000 Watts Peak Pulse Power Capability on 10/1000us waveform * Glass passivated junction and plastic package devices * Low incremental surge resistance * High temperature |
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WILLAS |
30000W AXIAL LEAD TRANSIENT VOLTAGE SUPPRESSOR Features Package outline • Batch process design, excellent •powLeer addissFipreaetioFninofifsehr/sRoHS Compliant(Note 1) ("P" Suffix designates 2 Amp • Recove(Cathode • bLLobaoopenwwttditmeOppr |
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WILLAS |
30000W AXIAL LEAD TRANSIENT VOLTAGE SUPPRESSOR Features Package outline • Batch process design, excellent •powLeer addissFipreaetioFninofifsehr/sRoHS Compliant(Note 1) ("P" Suffix designates 2 Amp • Recove(Cathode • bLLobaoopenwwttditmeOppr |
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Samsung semiconductor |
(IRFP130 - IRFP133) N-CHANNEL POWER MOSFETS |
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Philips |
Silicon PIN diode • High voltage, current controlled • RF resistor for RF attenuators and switches • Low diode capacitance • Low diode forward resistance • Very low series inductance www.DataSheet4U.com BAP1321-03 PINNING PIN 1 2 DESCRIPTION cathode anode • For appl |
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Cypress |
Programmable System-on-Chip Operating characteristics Voltage range: 1.71 to 5.5 V, up to 6 power domains Temperature range (ambient) –40 to 85 °C[1] DC to 80-MHz operation Power modes • Active mode 3.1 mA at 6 MHz, and 15.4 mA at 48 MHz • 2-µA sleep mode • 300-nA hi |
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WON-TOP |
20000W TRANSIENT VOLTAGE SUPPRESSOR Glass Passivated Die Construction 20000W Peak Pulse Power Dissipation 20V – 300V Standoff Voltage Uni- and Bi-Directional Versions Available Excellent Clamping Voltage Typical Response Time < 1nS Plastic Case Material has UL Flammabilit |
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MDE Semiconductor |
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Glass passivated junction • 20000W Peak Pulse Power capability on 10/1000 µs waveform • Excellent clamping capability • Repetition rate (duty cycle):0.05% • Low increme |
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NXP |
Silicon PIN diode • High voltage, current controlled • RF resistor for RF attenuators and switches • Low diode capacitance • Low diode forward resistance • Very low series inductance • For applications up to 3 GHz. k, 4 columns BAP1321-04 PINNING PIN 1 2 3 DESCRIPTIO |
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WON-TOP |
20000W TRANSIENT VOLTAGE SUPPRESSOR Glass Passivated Die Construction 20000W Peak Pulse Power Dissipation 20V – 300V Standoff Voltage Uni- and Bi-Directional Versions Available Excellent Clamping Voltage Typical Response Time < 1nS Plastic Case Material has UL Flammabilit |
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UN Semiconductor |
Axial Lead Transient Voltage Suppressors u Glass passivated chip junction in P600 Package u Low leakage u Uni and Bidirectional unit u Excellent clamping capability u 20000W Peak power capability at 10 × 1000µs waveform Repetition rate (duty cycle):0.01% u Fast response time: typically less |
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Supertex Inc |
P-Channel Enhancement-Mode Vertical DMOS Power FETs |
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