डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
NTH4L160N120SC1 | SiC MOSFET DATA SHEET www.onsemi.com
Silicon Carbide (SiC) MOSFET – EliteSiC, 160 mohm, 1200 V, M1, TO-247-4L
NTH4L160N120SC1
Features
• Typ. RDS(on) = 160 mW • Ultra Low Gate Charge (QG(tot) = 34 nC) • Hig |
ON Semiconductor |
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NTH4L160N120SC1 | SiC MOSFET | ON Semiconductor |
www.DataSheet.in | 2017 | संपर्क |