डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
NTH4L022N120M3S | SiC MOSFET DATA SHEET www.onsemi.com
Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200 V, M3S, TO-247-4L
V(BR)DSS 1200 V
RDS(ON) MAX 30 mW @ 18 V
D
ID MAX 89 A
NTH4L022N120M3S
Features
• Typ. RDS(on) = 22 |
ON Semiconductor |
|
NTH4L022N120M3S | SiC MOSFET | ON Semiconductor |
www.DataSheet.in | 2017 | संपर्क |