डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
NTH4L015N065SC1 | SiC MOSFET DATA SHEET www.onsemi.com
Silicon Carbide (SiC) MOSFET – EliteSiC, 12 mohm, 650 V, M2, TO-247-4L
NTH4L015N065SC1
Features
• Typ. RDS(on) = 12 mW @ VGS = 18 V
Typ. RDS(on) = 15 mW @ VGS = 15 V
• Ultra |
ON Semiconductor |
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NTH4L015N065SC1 | SiC MOSFET | ON Semiconductor |
www.DataSheet.in | 2017 | संपर्क |