NTE295 डाटा शीट PDF( Datasheet )

NTE295 Silicon NPN Transistor RF Power Output, Driver Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE2950 MOSFET N−Channel, Enhancement Mode High Speed Switch TO−262 Type Package Features: D Low RDSON Reduces Losses D Low Gate Charge Improves the Switching Performance D Improved Diode Recovery Improves

NTE2951 MOSFET N−Channel, Enhancement Mode High Speed Switch TO−247 Type Package Features: D High Speed Switching D No Secondary Breakdown D Avalanche−Proof D Low ON−Resistance D Low Driving Power Appl

NTE2953 MOSFET N−Channel, Enhancement Mode High Speed Switch TO−220 Full Pack Type Package D Applications: D AC−to−DC Power Supply Equipment D Motor Control D Server Power Supplies D Synchronous Recti

NTE2954 MOSFET N−Channel, Enhancement Mode High Speed Switch TO−220 Full Pack Type Package Features: D Low Gate Charge: 147nC Typ D Low Reverse Transfer Capacitance: 300pF Typ D Fast Switching D 100% Avala

NTE2955 MOSFET N−Channel, Enhancement Mode High Speed Switch Application: D CS Switch for CRT Display Monitor Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Drain−Source Voltage (VGS =

NTE2956 MOSFET N−Channel, Enhancement Mode High Speed Switch TO−220 Full Pack Type Package Features: D RDS(on) = 380mW Max @ VGS = 10V, ID = 8A D Low Gate Charge: 32nC Typ D Low CRSS: 20pF Typ D 100% Avala