डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
NTE291 | N-Channel MOSFET NTE291 (NPN) & NTE292 (PNP) Silicon Complementary Transistors Medium Power Amp, Switch
Description: The NTE291 (NPN) and NTE292 (PNP) are General–Purpose Medium–Power silicon complementary transistors in a |
NTE |
|
NTE2910 | N-Channel MOSFET NTE2910
N−Channel Field Effect Transistor Switch, TO18 Type Package
Features: D Fast Switching, tON ≤ 15ns
Absolute Maximum Ratings: (TA = +25°C, Note 1 unless otherwise specified) Maximum Gate−to−Dra |
NTE |
|
NTE2911 | N-Channel MOSFET NTE2911 MOSFET N−Channel, Enhancement Mode High Speed Switch TO−220 Full Pack Type Package
D
Features: D Low Drain−Source ON−Resistance D High Forward Transfer Admittance D Low Leakage Current D Enhan |
NTE |
|
NTE2912 | N-Channel MOSFET NTE2912 MOSFET N−Channel, Enhancement Mode High Speed Switch TO220 Type Package
Features: D Advanced Process technology D Ultra Low ON−Resistance D Dynamic dv/dt Rating D +1755C Operating Temperature D Fas |
NTE |
|
NTE2913 | N-Channel MOSFET NTE2913 MOSFET N−Ch, Enhancement Mode High Speed Switch TO247 Type Package
Features:
D
D Advanced Process Technology
D Ultra Low On−Resistance
D Dynamic dv/dt Rating
D +1755C Operating Temperature D F |
NTE |
|
NTE2914 | N-Channel MOSFET NTE2914 MOSFET N−Channel, Enhancement Mode High Speed Switch TO220FM Type Package
Features: D Low On−Resistance: RDS = 0.026W Typ. D High Speed Switching D 4V Gate Drive Device can be Driven from 5V Source |
NTE |
|
NTE2915 | N-Channel MOSFET NTE2915 MOSFET N−Channel, Enhancement Mode High Speed Switch TO220 Type Package
Features:
D Low Gate−to−Drain Charge to Reduce Switching Losses
D
Fully Characterized to Simplify Design
Capacitance
I |
NTE |
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